Investigation of Asymmetric Characteristics of Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O Field Effect Transistors

被引:18
|
作者
Chen, Qian [1 ,2 ]
Wang, Lingfei [1 ,2 ]
Duan, Xinlv [1 ,2 ]
Guo, Jingrui [1 ,2 ]
Wang, Zhaogui [3 ]
Huang, Kailiang [3 ]
Feng, Junxiao [3 ]
Sun, Ying [3 ]
Jiao, Guangfan [3 ]
Jing, Weiliang [3 ]
Geng, Di [1 ,2 ]
Li, Ling [1 ,2 ]
机构
[1] Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China
[2] Chinese Acad Sci, Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China
[3] Huawei Technol Co Ltd, Shenzhen 518129, Peoples R China
关键词
Electrodes; Performance evaluation; Field effect transistors; Hafnium oxide; Logic gates; Random access memory; Electric potential; Asymmetric characteristic; contact barrier; drain-induced barrier lowering (DIBL); In-Ga-Zn-O (IGZO); technology computer-aided design (TCAD); THIN-FILM TRANSISTORS; A-IGZO TFTS;
D O I
10.1109/LED.2022.3168059
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work reports the comprehensive study on asymmetric characteristic based on proposed stackable vertical Channel-All-Around (CAA) In-Ga-Zn-O field-effect transistors (IGZO FETs). Sufficient experimental data are analyzed for the reason of performance distinction between normal and reversed source/drain setup. Contact profile has great impacts on device characteristics such as short-channel effects and drain-induced barrier lowering (DIBL) due to different electric filed distributions in the IGZO channel near Schottky barrier. That is mainly caused by different etch process for upper and bottom electrodes, which doesn't exist in planar structures. Furthermore, a 3-D technology computer-aided design (TCAD) device model is established. Interface defects are applied for slight variation in contact potential to verify the accuracy. Related analysis of contact barriers has been done based on simulation results. What's more, channel length and etching depth of bottom electrode are also play a role in asymmetric characteristics, which could be applied as a reference to improve devices performance.
引用
收藏
页码:894 / 897
页数:4
相关论文
共 50 条
  • [41] Quantum Confinement Effect in Amorphous In-Ga-Zn-O Heterojunction Channels for Thin-Film Transistors
    Koretomo, Daichi
    Hamada, Shuhei
    Magari, Yusaku
    Furuta, Mamoru
    MATERIALS, 2020, 13 (08)
  • [42] Improvement in current drivability and stability in nanoscale vertical channel thin-film transistors via band-gap engineering in In-Ga-Zn-O bilayer channel configuration
    Ahn, Hyun-Min
    Kwon, Young-Ha
    Seong, Nak-Jin
    Choi, Kyu-Jeong
    Hwang, Chi-Sun
    Yang, Jong-Heon
    Kim, Yong-Hae
    Kim, Gyungtae
    Yoon, Sung-Min
    NANOTECHNOLOGY, 2023, 34 (15)
  • [43] Intrinsic carrier mobility in amorphous In-Ga-Zn-O thin-film transistors determined by combined field-effect technique
    Kimura, Mutsumi
    Kamiya, Toshio
    Nakanishi, Takashi
    Nomura, Kenji
    Hosono, Hideo
    APPLIED PHYSICS LETTERS, 2010, 96 (26)
  • [44] Influence of Reduction in Effective Channel Length on Device Operations of In-Ga-Zn-O Thin-Film Transistors With Variations in Channel Compositions
    Bae, Soo-Hyun
    Ryoo, Hyun-Joo
    Yang, Jong-Heon
    Kim, Yong-Hae
    Hwang, Chi-Sun
    Yoon, Sung-Min
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (12) : 6159 - 6165
  • [45] Performance Enhancement of Amorphous In-Ga-Zn-O Thin Film Transistors with Partial Hetero-Junction Channel Layer
    Ahn, Min-Ju
    Cho, Won-Ju
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (11) : 11347 - 11352
  • [46] The effect of various solvents on the back channel of solution-processed In-Ga-Zn-O thin-film transistors intended for biosensor applications
    Kim, Si Joon
    Jung, Joohye
    Yoon, Doo Hyun
    Kim, Hyun Jae
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (03)
  • [47] Modulation of the operational characteristics of amorphous In-Ga-Zn-O thin-film transistors by In2O3 nanoparticles
    Lee, Min-Jung
    Lee, Tae Il
    Park, Jee Ho
    Kim, Jung Han
    Chae, Gee Sung
    Jun, Myung Chul
    Hwang, Yong Kee
    Baik, Hong Koo
    Lee, Woong
    Myoung, Jae-Min
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 45 (20)
  • [48] Investigation of a Hump Phenomenon in Back-Channel-Etched Amorphous In-Ga-Zn-O Thin-Film Transistors Under Negative Bias Stress
    Yang, Jianwen
    Liao, Po-Yung
    Chang, Ting-Chang
    Chen, Bo-Wei
    Huang, Hui-Chun
    Chiang, Hsiao-Cheng
    Su, Wan-Ching
    Zhang, Qun
    IEEE ELECTRON DEVICE LETTERS, 2017, 38 (05) : 592 - 595
  • [49] Improved Field-Effect Mobility of In-Ga-Zn-O TFTs by Oxidized Metal Layer
    Park, Ji-Min
    Kim, Hyoung-Do
    Jang, Seong Cheol
    Kim, Min Jung
    Chung, Kwun-Bum
    Kim, Yong Joo
    Kim, Hyun-Suk
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (11) : 4924 - 4928
  • [50] Effect of a Self-Assembled Monolayer on the Electrical Properties of In-Ga-Zn-O Thin-Film Transistors
    Kim, Hoon
    Kang, Chan-Mo
    Oh, Yeon-Wha
    Baek, Kyu-Ha
    Do, Lee-Mi
    SCIENCE OF ADVANCED MATERIALS, 2018, 10 (04) : 513 - 517