Quantum switches and quantum memories for matter-wave lattice solitons

被引:14
|
作者
Ahufinger, V. [1 ]
Mebrahtu, A.
Corbalan, R.
Sanpera, A.
机构
[1] Univ Autonoma Barcelona, ICREA, E-08193 Barcelona, Spain
[2] Univ Autonoma Barcelona, Dept Fis, Grp Opt, E-08193 Barcelona, Spain
[3] Leibniz Univ Hannover, Inst Theoret Phys, D-30167 Hannover, Germany
[4] Univ Autonoma Barcelona, Dept Fis, Fis Teor Grp, E-08193 Barcelona, Spain
来源
NEW JOURNAL OF PHYSICS | 2007年 / 9卷
关键词
D O I
10.1088/1367-2630/9/1/004
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study the possibility of implementing a quantum switch and a quantum memory using matter-wave lattice solitons and making them interact with 'effective' potentials (barrier/well) corresponding to defects of the optical lattice. In the case of interaction with an 'effective' potential barrier, the bright lattice soliton experiences an abrupt transition from complete transmission to complete reflection ( quantum switch) for a critical height of the barrier. The trapping of the soliton in an 'effective' potential well and its release on demand, without losses, shows the feasibility of using the system as a quantum memory. The inclusion of defects as a way of controlling the interactions between two solitons is also reported.
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页数:13
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