Effects of RF power on the structural, optical and electrical properties of Al-doped zinc oxide films

被引：67
|
作者：
Kuo, Shou-Yi [1 ,2 ]
Liu, Kou-Chen [1 ]
Lai, Fang-I [3 ]
Yang, Jui-Fu [1 ]
Chen, Wei-Chun
Hsieh, Ming-Yang [1 ]
Lin, Hsin-I [1 ]
Lin, Woei-Tyng [3 ]
机构：
[1] Chang Gung Univ, Dept Elect Engn, Guishan, Taiwan
[2] Chang Gung Univ, Green Technol Res Ctr, Guishan, Taiwan
[3] Yuan Ze Univ, Dept Electroopt Engn, Tao Yuan, Taiwan
来源：
MICROELECTRONICS RELIABILITY | 2010年 / 50卷 / 05期
关键词：
THIN-FILMS; ZNO FILMS; TEMPERATURE; DEPOSITION; RESISTIVITY; DEPENDENCE; MORPHOLOGY; EMISSION;
D O I：
10.1016/j.microrel.2010.01.042
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, we discussed the effects of growth parameters on the structural and optical properties of Al-doped zinc oxide (AZO) deposited at room temperature by radio-frequency magnetron sputtering. The AZO films have been characterized in detail using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, Hall-effect measurement system and UV-visible spectrophotometer. It was found that the morphological, structural, electrical and optical properties of AZO films are greatly dependent on sputtering power. Collision between sputter species and surface morphology play important roles in optoelectrical properties of AZO films. According to our experimental results, the AZO films can be used in versatile devices to meet various requirements. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：730 / 733
页数：4
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