Integrated power measurement circuit for RF power amplifiers

被引:2
|
作者
Pollanen, O [1 ]
Jarvinen, E [1 ]
机构
[1] Nokia Mobile Phones, FIN-00045 Helsinki, Finland
关键词
D O I
10.1109/RAWCON.2000.881898
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A RF power measurement circuit, which operates on the same chip with an integrated RF power amplifier, is presented. The circuit is capable of measuring load variation dependent output power changes. Full integration saves the PCB area needed for the line coupler used in conventional power detection methods: The circuit was realised using GaAs MMIC technology and rested on a standard FR4 test board at 900 MHz. The circuit detects RF power in a range of 35 dB with a sensitivity of 0.8 V/W: showing good agreement with the simulations.
引用
收藏
页码:235 / 238
页数:4
相关论文
共 50 条
  • [21] Linearization of RF power amplifiers using power feedback
    Shi, Bo
    Sundstrom, Lars
    IEEE Vehicular Technology Conference, 1999, 2 : 1520 - 1524
  • [22] A low-power RF integrated circuit for implantable sensors
    Adeeb, MA
    Nguyen, H
    Islam, SK
    Zhang, M
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2006, 47 (03) : 355 - 363
  • [23] A low-power RF integrated circuit for implantable sensors
    Mohammad A. Adeeb
    Hung Nguyen
    Syed K. Islam
    Mo Zhang
    Analog Integrated Circuits and Signal Processing, 2006, 47 : 355 - 363
  • [24] ESD power clamp with adjustable trigger voltage for RF power amplifier integrated circuit
    Chaudhry, Iqbal
    Peachey, Nathaniel
    2016 38TH ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM (EOS/ESD), 2016,
  • [25] Emulation of Array Coupling Influence on RF Power Amplifiers in a Measurement Setup
    Nopchinda, Dhecha
    Buisman, Koen
    2016 87TH ARFTG MICROWAVE MEASUREMENT CONFERENCE (ARFTG), 2016,
  • [26] A Simple and Universal Measurement Method for the Efficiency of Pulsed RF Power Amplifiers
    Fang, Wen-Rao
    Huang, Wen-Hua
    Huang, Wen-Hui
    Fu, Chao
    Wang, Lu-Lu
    He, Tian-Wei
    Ma, Jian-Guo
    IEEE ACCESS, 2020, 8 (08): : 59200 - 59210
  • [27] Direct measurement of the maximum operating region in AlGaAsHBTs for RF power amplifiers
    Inoue, A
    Nakatsuka, S
    Suzuki, S
    Yamamoto, K
    Shimura, T
    Hattori, R
    Mitsui, Y
    IEICE TRANSACTIONS ON ELECTRONICS, 2003, E86C (08): : 1451 - 1457
  • [28] Direct measurement of the maximum operating region in GaAsHBTs for RF power amplifiers
    Inoue, A
    Nakatsuka, S
    Suzuki, S
    Yamamoto, K
    Shimura, T
    Hattori, R
    Mitsui, Y
    2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2001, : 1687 - 1690
  • [29] Reducing measurement noise effects in digital predistortion of RF power amplifiers
    Morgan, DR
    Ma, ZX
    Ding, L
    2003 IEEE INTERNATIONAL CONFERENCE ON COMMUNICATIONS, VOLS 1-5: NEW FRONTIERS IN TELECOMMUNICATIONS, 2003, : 2436 - 2439
  • [30] PROTECTION OF TRANSISTOR RF POWER AMPLIFIERS
    BAY, KK
    IEEE VEHICULAR TECHNOLOGY GROUP-ANNUAL CONFERENCE, 1968, (DEC): : 52 - &