Observation of the Out-of-Plane Polarized Spin Current from CVD Grown WTe2

被引:37
|
作者
Shi, Shuyuan [1 ]
Li, Jie [2 ]
Hsu, Chuang-Han [1 ,3 ]
Lee, Kyusup [1 ]
Wang, Yi [1 ,4 ]
Li Yang [2 ]
Wang, Junyong [5 ,6 ]
Wang, Qisheng [1 ]
Wu, Hao [2 ]
Zhang, Wenfeng [2 ]
Eda, Goki [5 ,6 ]
Liang, Gengchiau [1 ]
Chang, Haixin [2 ]
Yang, Hyunsoo [1 ,5 ]
机构
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
[2] Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & & Mould Technol, Quantum Nano Matter & Device Lab, Wuhan 430074, Peoples R China
[3] Acad Sinica, Inst Phys, Taipei 11529, Taiwan
[4] Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China
[5] Natl Univ Singapore, Ctr Adv 2D Mat, 6 Sci Dr 2, Singapore 117546, Singapore
[6] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
基金
中国国家自然科学基金; 新加坡国家研究基金会;
关键词
CVD-WTe2; first-principles; magnetization switching; out-of-plane spin; spin conductivity; ST-FMR; WEYL FERMION SEMIMETAL; TO-CHARGE CONVERSION; SYMMETRY;
D O I
10.1002/qute.202100038
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Weyl semimetal Td-phase WTe2 possesses the spin-resolved band structure with strong spin-orbit coupling, holding promises as a useful spin source material. The noncentrosymmetric crystalline structure of Td-WTe2 endows the generation of the out-of-plane polarized spin, which is of great interest in magnetic memory applications. Previously, WTe2 was explored in spin devices based on mechanically exfoliated single crystal flakes with a size of micrometers. For practical spintronics applications, it is highly desirable to implement wafer-scale thin films. In this work, centimeter-scale chemical vapor deposition (CVD) grown Td-WTe2 thin films are used and the spin current generation is studied by the spin torque ferromagnetic resonance (ST-FMR) technique. The in-plane and out-of-plane spin conductivities of 7.36 x 10(3) (PLANCK CONSTANT OVER TWO PI/2e) (ohm m)(-1) and 1.76 x 10(3) (PLANCK CONSTANT OVER TWO PI/2e) (ohm m)(-1), respectively, are found in CVD-growth 5 nm-WTe2. The current-induced magnetization switching in WTe2/NiFe is demonstrated at room temperature in the domain wall motion regime, which may invigorate potential spintronic device innovations based on Weyl semimetals.
引用
收藏
页数:7
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