Monte Carlo simulations of ion channeling in crystals containing extended defects

被引：30

作者：

Turos, A. ^{[1
,2
]}

Nowicki, L. ^{[2
]}

Stonert, A. ^{[2
]}

Pagowska, K. ^{[2
]}

Jagielski, J. ^{[1
,2
]}

Muecklich, A. ^{[3
]}

机构：

[1] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

[2] Soltan Inst Nucl Studies, PL-05400 Otwock, Poland

[3] Forschungszentrum Dresden Rossendorf, D-01314 Dresden, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2010年 / 268卷 / 11-12期

关键词：

Rutherford backscattering; Ion channeling; Monte Carlo simulations; GaN epitaxial layers; Ion bombardment; Extended defects; GAN;

D O I：

10.1016/j.nimb.2010.02.046

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A Monte Carlo code for simulations of ion channeling in crystals containing extended defects has been developed. A bent channel model of lattice distortions produced by dislocations has been used for defect analysis in ion implanted GaN. To test the code, the energy dependence of the dechanneling parameter has been calculated for crystals containing randomly displaced atoms and bent channels. It follows the 1/E and E(1/2) dependence, respectively. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1718 / 1722

页数：5

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