Mechanisms of formation and topological analysis of porous silicon - computational modeling

被引：6

作者：

Aleksandrov, LN ^{[1
]}

Novikov, PL ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

COMPUTATIONAL MATERIALS SCIENCE | 1998年 / 10卷 / 1-4期

关键词：

porous silicon; quantum confinement; fractal dimension;

D O I：

10.1016/S0927-0256(97)00182-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Porous silicon formation under anodization in HF solution is studied by means of computer simulation, using the model, which takes into account the Si dissolution, thermal generation, diffusion and drift of holes and quantum confinement. Structures of porous layer, obtained in computational experiments at various doping level of initial Si, temperatures, HF concentrations, anode current densities, are shown and analyzed. The porosity and fractal dimension of the obtained porous structures are also analyzed. Copyright (C) 1998 Elsevier Science B.V.

引用

页码：406 / 410

页数：5

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