Two-dimensional multiferroic semiconductors with coexisting ferroelectricity and ferromagnetism

被引:142
|
作者
Qi, Jingshan [1 ]
Wang, Hua [2 ]
Chen, Xiaofang [1 ]
Qian, Xiaofeng [2 ]
机构
[1] Jiangsu Normal Univ, Sch Phys & Elect Engn, Xuzhou 221116, Jiangsu, Peoples R China
[2] Texas A&M Univ, Dept Mat Sci & Engn, College Stn, TX 77843 USA
基金
中国国家自然科学基金;
关键词
ENERGY; PHOSPHORUS; DISCOVERY; CRYSTAL; PHYSICS; POINTS;
D O I
10.1063/1.5038037
中图分类号
O59 [应用物理学];
学科分类号
摘要
Low-dimensional multiferroicity, though highly scarce in nature, has attracted great attention due to both fundamental and technological interests. Using first-principles density functional theory, we show that ferromagnetism and ferroelectricity can coexist in monolayer transition metal phosphorus chalcogenides (TMPCs)-CuMP2X6 (M = Cr, V; X = S, Se). These van der Waals layered materials represent a class of 2D multiferroic semiconductors that simultaneously possess ferroelectric and ferromagnetic orders. In these monolayer materials, Cu atoms spontaneously move away from the center atomic plane, giving rise to nontrivial electric dipole moment along the plane normal. In addition, their ferromagnetism originates from indirect exchange interaction between Cr/V atoms, and their out-of-plane ferroelectricity suggests the possibility of controlling electric polarization by external vertical electric field. Monolayer semiconducting TMPCs thus provide a solid-state 2D materials platform for realizing 2D nanoscale switches and memory devices patterned with top and bottom electrodes. Published by AIP Publishing.
引用
收藏
页数:5
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