Bright room temperature near-infrared single-photon emission from single point defects in the AlGaN film

被引：8
|
作者：
Xue, Yingxian [1 ]
Chen, Feiliang [2 ]
Fang, Zhiyun [1 ]
Zhang, Shiyu [1 ]
Li, Qian [2 ]
Li, Mo [3 ]
Kang, Jianbin [2 ]
Zhang, Jian [3 ]
Shen, Si [1 ]
Wu, Botao [1 ]
Wu, E. [1 ,4 ]
机构：
[1] East China Normal Univ, State Key Lab Precis Spect, Shanghai 200241, Peoples R China
[2] China Acad Engn Phys, Microsyst & Terahertz Res Ctr, 596 Yin He Rd, Chengdu 610200, Peoples R China
[3] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Peoples R China
[4] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2021年 / 118卷 / 13期
基金：
中国国家自然科学基金;
关键词：
Gallium alloys - Photons - Gallium nitride - Optical fibers - Semiconductor alloys - III-V semiconductors - Photonic devices - Infrared devices - Optical fiber communication - Particle beams - Room temperature - Aluminum alloys - Light transmission - Point defects;
D O I：
10.1063/5.0045506
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Near-infrared (NIR) single-photon source plays a key role in a wide range of applications in quantum technology. In particular, in quantum communication, the NIR wavelength operation perfectly matches the relatively low-attenuation transmission window of the optical fiber, which attracts more and more research interest. Here, we report the room temperature single-photon emission from single point defects in the aluminum gallium nitride (AlGaN) film. The obtained single-photon emission covers from 720 to 930nm and exhibits highly linear polarization and high photon brightness. This may provide a platform for future integrated on-chip quantum photonic devices.
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收藏
页数：5
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