Intrinsic-polarization origin of photoconductivity in MAPbI3 thin films

被引:6
|
作者
Saraf, Rohit [1 ]
Saguy, Cecile [2 ]
Maheshwari, Vivek [1 ]
Elangovan, Hemaprabha [2 ,3 ]
Ivry, Yachin [2 ,3 ]
机构
[1] Univ Waterloo, Waterloo Inst Nanotechnol, Dept Chem, Waterloo, ON N2L 3G1, Canada
[2] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel
[3] Technion Israel Inst Technol, Dept Mat Sci & Engn, IL-32000 Haifa, Israel
基金
以色列科学基金会;
关键词
D O I
10.1063/5.0046997
中图分类号
O59 [应用物理学];
学科分类号
摘要
Hybrid halide perovskites (HHPs) exhibit exceptional photoelectric properties, facilitating highly efficient modern solar cells and photoconductive technologies. Both ion migration and intrinsic spontaneous polarization have been proposed as the main source of enhanced photoelectric activity, but the exact origin of the advantageous properties has remained elusive. Here, we combined nanoscale and macroscale device characterization studies to demonstrate that intrinsic polarization conductivity governs photoconductivity in HHP films. Conductive atomic force microscopy under variable light and temperature conditions showed that the photocurrent in these materials is directional and flows along the long crystallographic axis, as opposed to other conduction mechanisms that prioritize the shortest path between the electrode and the conductive tip. It was also shown that the photocurrent is suppressed at the tetragonal-to-cubic transformation. The findings were confirmed by macroscale device measurements. Following the nonvolatile memory nature of polarization domains, photoconductive memristive behavior was demonstrated. Understanding the origin of photoelectric activity in HHPs allows designing devices with enhanced functionality.
引用
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页数:6
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