Transport properties of Ti-Ni-Zr films grown by pulsed laser deposition

被引：2
|
作者：
Boffoué, O
Lenoir, B
Jacquot, A
Brien, V
Bellouard, C
Dauscher, A
机构：
[1] ENSMN, UHP, INPL, CNRS,UMR 7556,Lab Phys Mat, F-54042 Nancy, France
[2] ENSMN, UHP, INPL, CNRS,UMR 7584,Lab Sci & Genie Mat & Met, F-54042 Nancy, France
来源：
SOLID STATE COMMUNICATIONS | 2004年 / 132卷 / 3-4期
关键词：
quasicrystals; thin films; transport properties;
D O I：
10.1016/j.ssc.2004.07.037
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Quasicrystalline Ti41.5Ni17Zr41.5 thin films have been synthesized at different temperatures by pulsed laser deposition (PLD) from a. Nd:YAG laser. Electrical resistivity, Hall coefficient, magnetoresistance and thermopower measurements have been conducted in the 4.4-300 K or 70-300 K temperature range. Ti41.5Ni17Zr41.5 quasicrystals are characterized by a high electrical conductivity, an order of magnitude higher than in other quasicrystals, independent of their morphology and microstructure. Hall measurements indicate that the films have a high carrier concentration. Thermoelectric powers in T41.5Ni17Zr41.5 have relatively small magnitudes and the values have been found to depend on the microstructure. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：209 / 212
页数：4
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