Magneto-quantum transport in AlxGa1-xAsySb1-y/InAs quantum wells

被引：0
|
作者：
Ishida, S. [1 ]
Fujimoto, A. [2 ]
Tamiya, S. [3 ]
Oto, K. [3 ]
Okamoto, A. [4 ]
Shibasaki, I. [4 ]
机构：
[1] Tokyo Univ Sci, Yamaguchi 7560884, Japan
[2] Osaka Inst Tech, Nanomat Microdevices Res Ctr, Osaka 5358585, Japan
[3] Chiba Univ, Fac Sci, Dept Phys, Chiba 2638522, Japan
[4] Asahi Kasei Corp, Shizuoka 4168501, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 2 | 2007年 / 4卷 / 02期
关键词：
D O I：
10.1002/pssc.200673284
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Magneto-quantum (t)ransport properties in AlxGa1-xAsySb1-y/InAs deep quantum wells (QWs) with different well width (L-w = 15 and 50 nm) have been studied both in low and high magnetic fields. The low-field magnetoconductance has been explained in the light of the two-dimensional weak- localization theory taking account of the effect of Zeeman splitting on spin-orbit scattering of electrons. Analysis of Quantum Hall effect (QHE) in high-field region for L-w = 50 nm indicates the existence of a small number of holes only partially participating with the QHE, suggesting that our QW is a type-II hetero-structure.
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页码：325 / +
页数：3
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