Characterization of silver interdiffusion into (Zn,Mg)TiO3+x:Bi:Sb multilayer ceramic capacitor

被引:4
|
作者
Lee, Wen-His [1 ]
Su, Chi-Yi [1 ]
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
关键词
D O I
10.1111/j.1551-2916.2007.01799.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, (Zn,Mg)TiO3+x+Bi2O3+Sb2O5 multilayer ceramic capacitors (MLCCs) with different proportions of a silver (Ag)-palladium (Pd) mixture acting as the inner electrode were sintered at 925 degrees C for 2 h to evaluate the effect of the inner electrode on reliability. The main results reveal that the lifetime is inversely proportional to the Ag content in the Ag/Pd inner electrode. Ag diffusion into the (Zn,Mg)TiO3+x+Bi2O3+Sb2O5 MLCC during cofiring at 925 degrees C for 2 h and Ag migration at 140 degrees C against 200 V are both responsible for the short lifetime of the (Zn,Mg)TiO3+x+Bi2O3+Sb2O5 MLCC, particularly the latter factor. A Bi,Sb-rich secondary phase was present at the triple junction and a small amount of Ag was detected from the second phase for a (Zn,Mg)TiO3+x+Bi2O3+Sb2O5 MLCC with a high Ag content in the inner electrode of Ag/Pd = 99/01. However, this was not the case with a low Ag content in the inner electrode of Ag/Pd = 90/10. This means that the Bi,Sb-rich second phase plays an important role in determining the degradation of insulation resistance due to the excessive formation of oxygen vacancies from the reaction of Ag+ for Bi3+ or Sb5+ substitution to lower the activation energy of the (Zn,Mg)TiO3+Bi2O3+Sb2O5 dielectrics and to enhance markedly the effect of Ag migration.
引用
收藏
页码:2454 / 2460
页数:7
相关论文
共 50 条
  • [41] Enhanced thermoelectric properties of (Bi0.5Sb1.5Te3)1-x-y(PbTe)x(Zn4Sb3)y by combinatorial screening
    Tseng, Shih Chun
    Chao, Wen Hsuan
    Yang, Ping Hsing
    Chu, Hsu Shen
    Hwang, Jenn Dong
    Wu, Ren Jye
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 588 : 658 - 661
  • [42] LaAlO3 doped (Mg0.95Zn0.05)TiO3-CaTiO3 ceramic system with ultra-high-Q and temperature-stable characterization
    Li, Lingxia
    Li, Sai
    Lyu, Xiaosong
    Sun, Hao
    Ye, Jing
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2015, 26 (08) : 5871 - 5876
  • [43] Negative temperature coefficient thermistor based on Bi3Zn2Sb3O14 ceramic:: An oxide semiconductor at high temperature
    Nobre, MAL
    Lanfredi, S
    APPLIED PHYSICS LETTERS, 2003, 82 (14) : 2284 - 2286
  • [44] Electronic and optical properties of Mg3XN (X = P, As, Sb, Bi) antiperovskites: The GW/BSE approach
    Oyeniyi, Ezekiel
    SOLID STATE COMMUNICATIONS, 2022, 355
  • [45] Prototyping Na0.5Bi0.5TiO3-based multilayer ceramic capacitors for high-temperature and power electronics
    Gehringer, Maximilian
    Hoang, An-Phuc
    Fulanovic, Lovro
    Makarovic, Kostja
    Malic, Barbara
    Fromling, Till
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2023, 43 (14) : 6122 - 6129
  • [46] Kinetic analysis on the synthesis of Mg0.95Zn0.05TiO3 microwave dielectric ceramic by polymeric precursor method
    Ullah, Asad
    Iqbal, Yaseen
    Mahmood, Tahira
    Mahmood, Asad
    Naeem, Abdul
    Hamayun, Muhammad
    CERAMICS INTERNATIONAL, 2015, 41 (10) : 15089 - 15096
  • [47] Dielectric, structural and Raman studies on (Na0.5Bi0.5TiO3)(1-x)( BiCrO3)x ceramic
    Selvamani, Rachna
    Singh, Gurvinderjit
    Sathe, Vasant
    Tiwari, V. S.
    Gupta, P. K.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 23 (05)
  • [48] Mg2X(X=Sn,Pb)和Mg3X2(X=Sb,Bi)热电性质的第一性原理研究
    王成江
    祝梦雅
    张婧
    分子科学学报, 2022, 38 (02) : 154 - 164
  • [49] Structural and Optoelectronic Properties of X3ZN (X = Ca, Sr, Ba; Z = As, Sb, Bi) Anti-Perovskite Compounds
    Imran Ullah
    G. Murtaza
    R. Khenata
    Asif Mahmood
    M. Muzzamil
    N. Amin
    M. Saleh
    Journal of Electronic Materials, 2016, 45 : 3059 - 3068
  • [50] Structural and Optoelectronic Properties of X3ZN (X = Ca, Sr, Ba; Z = As, Sb, Bi) Anti-Perovskite Compounds
    Ullah, Imran
    Murtaza, G.
    Khenata, R.
    Mahmood, Asif
    Muzzamil, M.
    Amin, N.
    Saleh, M.
    JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (06) : 3059 - 3068