The Application of Level Set Method for Simulation of PECVD/LPCVD Processes

被引：1

作者：

Singh, Sajal Sagar ^{[1
]}

Li, Yuan

Xing, Yan ^{[2
]}

Pal, Prem ^{[1
]}

机构：

[1] Indian Inst Technol, MEMS & Micro Nano Syst Lab, Hyderabad, Andhra Pradesh, India

[2] Southeast Univ, Dept Mech Engn, Lab Micro Nano Med Device, Nanjing, Peoples R China

来源：

PHYSICS OF SEMICONDUCTOR DEVICES | 2014年

关键词：

CVD; Level Set; DEPOSITION;

D O I：

10.1007/978-3-319-03002-9_60

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study we present a Chemical Vapor Deposition (CVD) process simulator based on the sparse field method for solving the level set equations. An accurate and efficient tool for tracking the CVD profile evolution is developed, which includes different physical effects of direct deposition and angle dependent ion-induced deposition as well as redeposition. The simulation results shows that the deposition profiles agree well with the experiment for different opening sizes and various micro structures. It also provides the evidence that this approach is able to describe the complex topographical evolution for PECVD/LPCVD processes.

引用

页码：239 / 242

页数：4

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