The Application of Level Set Method for Simulation of PECVD/LPCVD Processes

被引:1
|
作者
Singh, Sajal Sagar [1 ]
Li, Yuan
Xing, Yan [2 ]
Pal, Prem [1 ]
机构
[1] Indian Inst Technol, MEMS & Micro Nano Syst Lab, Hyderabad, Andhra Pradesh, India
[2] Southeast Univ, Dept Mech Engn, Lab Micro Nano Med Device, Nanjing, Peoples R China
关键词
CVD; Level Set; DEPOSITION;
D O I
10.1007/978-3-319-03002-9_60
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study we present a Chemical Vapor Deposition (CVD) process simulator based on the sparse field method for solving the level set equations. An accurate and efficient tool for tracking the CVD profile evolution is developed, which includes different physical effects of direct deposition and angle dependent ion-induced deposition as well as redeposition. The simulation results shows that the deposition profiles agree well with the experiment for different opening sizes and various micro structures. It also provides the evidence that this approach is able to describe the complex topographical evolution for PECVD/LPCVD processes.
引用
收藏
页码:239 / 242
页数:4
相关论文
共 50 条
  • [1] Application of a level set method for simulation of droplet collisions
    Tanguy, S
    Berlemont, A
    [J]. INTERNATIONAL JOURNAL OF MULTIPHASE FLOW, 2005, 31 (09) : 1015 - 1035
  • [2] Application of level set method in simulation of surface roughness in nanotechnologies
    Radmilovic-Radjenovic, M.
    Radjenovic, B.
    Petrovic, Z. L. J.
    [J]. THIN SOLID FILMS, 2009, 517 (14) : 3954 - 3957
  • [3] Application of the level set method to the simulation of resin transfer molding
    Soukane, S
    Trochu, F
    [J]. COMPOSITES SCIENCE AND TECHNOLOGY, 2006, 66 (7-8) : 1067 - 1080
  • [4] Extension of the chemical reaction scheme in DSMC method and application to the LPCVD processes
    Sakiyama, Yukinori
    Takagi, Shu
    Matsumoto, Yoichiro
    [J]. Nippon Kikai Gakkai Ronbunshu, B Hen/Transactions of the Japan Society of Mechanical Engineers, Part B, 2002, 68 (667): : 689 - 695
  • [5] Feature length-scale modeling of LPCVD and PECVD MEMS fabrication processes
    Musson, LC
    Ho, P
    Plimpton, SJ
    Schmidt, RC
    [J]. NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS, 2004, : 239 - 242
  • [6] Feature length-scale modeling of LPCVD and PECVD MEMS fabrication processes
    Musson, LC
    Ho, P
    Plimpton, SJ
    Schmidt, RC
    [J]. MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2005, 12 (1-2): : 137 - 142
  • [7] Feature length-scale modeling of LPCVD and PECVD MEMS fabrication processes
    Lawrence C. Musson
    Pauline Ho
    Steven J. Plimpton
    Rodney C. Schmidt
    [J]. Microsystem Technologies, 2005, 12 : 137 - 142
  • [8] Simulation and inverse modeling of TEOS deposition processes using a fast level set method
    Heitzinger, C
    Fugger, J
    Häberlen, O
    Selberherr, S
    [J]. SISPAD 2002: INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2002, : 191 - 194
  • [9] A LEVEL SET METHOD FOR SIMULATION OF RISING BUBBLE
    HUANG Jun-tao
    [J]. Journal of Hydrodynamics, 2004, (04) : 379 - 385
  • [10] A LEVEL SET METHOD FOR SIMULATION OF RISING BUBBLE
    Huang Jun-tao
    Zhang Hui-sheng
    [J]. JOURNAL OF HYDRODYNAMICS, 2004, 16 (04) : 379 - 385