Feature length-scale modeling of LPCVD and PECVD MEMS fabrication processes

被引:6
|
作者
Musson, LC
Ho, P
Plimpton, SJ
Schmidt, RC
机构
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
[2] React Design Inc, San Diego, CA 92121 USA
关键词
MEMS; CVD; LPCVD; PECVD; level-set method; feature scale;
D O I
10.1007/s00542-005-0011-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The surface micromachining processes used to manufacture MEMS devices and integrated circuits transpire at such small length scales and are sufficiently complex that a theoretical analysis of them is particularly inviting. Under development at Sandia National Laboratories (SNL) is Chemically Induced Surface Evolution with Level Sets (ChISELS), a level-set based feature-scale modeler of such processes. The theoretical models used, a description of the software and some example results are presented here. The focus to date has been of low-pressure and plasma enhanced chemical vapor deposition (low-pressure chemical vapor deposition, LPCVD and PECVD) processes. Both are employed in SNLs SUMMiT V technology. Examples of step coverage Of SiO2 into a trench by each of the LPCVD and PECVD process are presented.
引用
收藏
页码:137 / 142
页数:6
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