An 850-nm InAlGaAs strained quantum-well vertical-cavity surface-emitting laser grown on GaAs (311)B substrate with high-polarization stability

被引：22
|
作者：
Tadanaga, O [1 ]
Tateno, K [1 ]
Uenohara, H [1 ]
Kagawa, T [1 ]
Amano, C [1 ]
机构：
[1] NTT, Photon Labs, Kanagawa 2430198, Japan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 08期
关键词：
anisotropic optical gain; GaAs (311)B substrate; polarization stability; strained quantum-well; surface-emitting lasers;
D O I：
10.1109/68.867968
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The polarization stability of 850-nn InAlGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) grown on GaAs (311)B substrate was investigated by comparing it with that of GaAs unstrained QW VCSEL grown on GaAs (311)B substrate. Photoluminescence measurement showed that strained QWs grown on GaAs (311)B substrate had larger anisotropy in optical gain than unstrained QWs. The VCSEL with strained QWs showed an orthogonal polarization suppression ratio (OPSR) as high as 21 dB under CW operation. Time-dependent OPSR measurement indicated that the strained QW VCSEL had higher polarization stability than the unstrained QW VCSEL under zero-bias modulation.
引用
收藏
页码：942 / 944
页数：3
相关论文
共 50 条
  • [21] Observation of bistability in GaAs quantum-well vertical-cavity surface-emitting lasers
    Tang, XF
    vanderZiel, JP
    Chang, B
    Johnson, R
    Tatum, JA
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (06) : 927 - 932
  • [22] Optical gain and threshold properties of strained InGaAlAs/AlGaAs quantum wells for 850-nm vertical-cavity surface-emitting lasers
    Chen, Jun-Rong
    Kuo, Yen-Kuang
    OPTICS COMMUNICATIONS, 2006, 264 (01) : 213 - 218
  • [23] Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers
    Yang, Hung-Pin D.
    Chen, I-Liang
    Lee, Chen-Hong
    Chiou, Chih-Hong
    Lee, Tsin-Dong
    Hsu, I-Chen
    Lai, Fang-I
    Lin, Gray
    Kuo, Hao-Chung
    Chi, Jim Y.
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (20-24): : L509 - L511
  • [24] Diode pumped 850 nm vertical-cavity surface-emitting laser
    Othman, M.
    Rorison, J. M.
    OPTIK, 2011, 122 (22): : 2016 - 2020
  • [25] Radiation effect of 850 nm vertical-cavity surface-emitting laser
    Chen J.
    Li Y.
    Ma L.
    Li Y.
    Guo Q.
    Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2022, 51 (05):
  • [26] Intracavity resonant quantum-well photodetection of a vertical-cavity surface-emitting laser
    Lim, SF
    Li, GS
    Yuen, W
    ChangHasnain, CJ
    ELECTRONICS LETTERS, 1997, 33 (07) : 597 - 598
  • [27] Design and analysis of a GaAs-based 850-nm vertical-cavity surface-emitting laser with different doping in the reflection regions
    Mitani, S. M.
    Choudhury, P. K.
    Alias, M. S.
    JOURNAL OF RUSSIAN LASER RESEARCH, 2007, 28 (06) : 610 - 618
  • [28] Design and analysis of a GaAs-based 850-nm vertical-cavity surface-emitting laser with different doping in the reflection regions
    S. M. Mitani
    P. K. Choudhury
    M. S. Alias
    Journal of Russian Laser Research, 2007, 28
  • [29] The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers
    Chang, Yi-An
    Ko, Tsung-Shine
    Chen, Jun-Rong
    Lai, Fang-I
    Yu, Chun-Lung
    Wu, I-Tsung
    Kuo, Hao-Chung
    Kuo, Yen-Kuang
    Laih, Li-Wen
    Laih, Li-Horng
    Lu, Tin-Chang
    Wang, Shing-Chung
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (10) : 1488 - 1494
  • [30] Wafer-bonded 850-nm vertical-cavity surface-emitting lasers on Si substrate with metal mirror
    Horng, RH
    Wuu, DS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (09): : 5849 - 5852
12345