The determination of electronic parameters of Al/MDMO-PPV/p-Si/Al Schottky diode by current-voltage characteristics

Current-voltage (I-V) characteristics of Al/MDMO-PPV/p-Si (111) Schottky barrier diodes (SBDs) have been investigated at room temperature. Here, (MDMO-PPV) poly-[2-(3,7-dimethyloctyloxy)-5-methyloxy]-para-phenylene-vinylene has been used as interfacial layer between metal and semiconductor layers. The characteristic parameters of the structure such as barrier height, ideality factor, interface states density and series resistance were determined from the electrical measurements. Also, Cheung functions and Norde method were used to evaluate the I-V characteristics and to obtain the characteristic parameters of the Schottky contact. The diode parameters such as ideality factor, barrier heights and interface state density, series resistance were found as 1,73-1,93 and 0,89-0,79 eV and 1,11x10(12) eV(-1) cm(-2) at (1,09-E-v) eV to 9,91x10(14) eV(-1) cm(-2) at (0,87-E-v) eV respectively. The series resistance R-s values were determined from dV/dIn I-I and H(I)-I plots and were found to be 9,2x10(3) k Omega and 10,1x10(3) k Omega respectively