Turn-Off Over-Voltage character of 6500V/600A IGBT Module

被引：2

作者：

Chen, Juan ^{[1
]}

Cao, Lin ^{[2
]}

Zang, Yuan ^{[1
]}

机构：

[1] Xian Univ Technol, Xian, Shaanxi, Peoples R China

[2] CRRC YONGJI ELECT CO, Yongji, Shanxi, Peoples R China

来源：

2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2019年

关键词：

6500V IGBT module; turn-off over voltage; gate resistance; junction temperature;

D O I：

10.1109/edssc.2019.8754383

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

this paper investigation the turn-off processes of 6500V IGBT module by analytical model and device physics, three types of commercial 6500V/600A IGBT module were tested with inductive load by double-pulse methods. The testing and analysis results show that turn-off over voltage semi controllable by the gate resistance, increases first and then decreases, mainly depend on the proportion of MOSFET electron current to the excess swept-out hole current when the voltage rise to the bus voltage. With increase IGBT junction temperature, the turn-off over voltage decreases, therefore turn-off over voltage failure is prone to occur when IGBT start working at low junction temperature.

引用

页数：3

共 44 条

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