p-Type Plastic Inorganic Thermoelectric Materials

被引:57
|
作者
Gao, Zhiqiang [1 ,2 ,3 ]
Yang, Qingyu [1 ,2 ]
Qiu, Pengfei [1 ,4 ]
Wei, Tian-Ran [5 ]
Yang, Shiqi [1 ,2 ]
Xiao, Jie [1 ]
Chen, Lidong [1 ,2 ]
Shi, Xun [1 ,5 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
[4] Univ Chinese Acad Sci, Hangzhou Inst Adv Study, Sch Chem & Mat Sci, Hangzhou 310024, Peoples R China
[5] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China
基金
中国国家自然科学基金;
关键词
defect engineering; flexible electronics; plastic inorganic semiconductors; thermoelectrics; TOTAL-ENERGY CALCULATIONS; THERMAL-CONDUCTIVITY; PERFORMANCE; COPPER; SEMICONDUCTOR; EFFICIENCY; DUCTILE; FIGURE; MERIT;
D O I
10.1002/aenm.202100883
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Deformable thermoelectrics have great potential in self-powered flexible or hetero-shaped electronics. The exceptional room-temperature plasticity recently discovered in several inorganic semiconductors makes it possible to develop new thermoelectric (TE) materials with both high performance and intrinsic deformability. Nonetheless, all the known plastic or ductile TE materials are n-type semiconductors. It is urgent to explore p-type counterparts for device design and fabrication. In this study, the first p-type plastic inorganic TE material is reported. Via alloying Cu in n-type plastic Ag2S0.7Se0.3 to modulate the charged crystal defects, (Ag1-xCux)(2)S0.7Se0.3 (x = 0.7-0.8) can simultaneously realize good plasticity and p-type conduction. Particularly, (Ag0.2Cu0.8)(2)S0.7Se0.3 with a hexagonal structure shows a maximum zT of 0.42 at 800 K. Via the introduction of Cu deficiencies, the good plasticity is well maintained while the maximum zT is greatly enhanced to 0.95 at 800 K, a record-high value for plastic TE materials. This study is expected to accelerate the development of plastic TE semiconductors and full-inorganic deformable TE devices for the application in hetero-shaped power generators.
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页数:7
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