Pd/Si device characteristics on 100 MeV gold ions irradiation

被引：9
|
作者：
Srivastava, PC [1 ]
Pandey, SP
Avasthi, DK
Asokan, K
机构：
[1] Banaras Hindu Univ, Dept Phys, Varanasi 221005, Uttar Pradesh, India
[2] Ctr Nucl Sci, New Delhi 110067, India
来源：
VACUUM | 1997年 / 48卷 / 12期
关键词：
D O I：
10.1016/S0042-207X(97)00104-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Pd/p-Si and Pd/n-Si devices were irradiated from 100 MeV gold (7+) ions for varying doses (similar to 10(11)-10(13) ions cm(-2)). The devices were characterized from I-V and C-V studies. It has been found that there is a change of conductivity type i.e. from n to p at a probed depth of similar to 8 mu m which is approximately the stopping range of the gold ions in silicon. A deep acceptor state (similar to 0.61 eV above V.B. edge) with a peak density of similar to 10(9) cm(-2) is observed for p-type irradiated devices at similar to 3 mu m which is attributed to the displacement damage caused by the high energy heavy ion irradiation. (C) 1998 Elsevier Science Ltd. All rights reserved.
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收藏
页码：965 / 967
页数：3
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