Investigation on the dielectric properties of (Ba, Sr)TiO3 thin films on hybrid electrodes

被引:10
|
作者
Wang, Jinzhao [1 ]
Zhang, Tianjin [1 ]
Pan, Runkun [1 ]
Jiang, Juan [1 ]
Ma, Zhijun [1 ]
Xiang, Chao [1 ]
机构
[1] Hubei Univ, Dept Mat Sci & Engn, Wuhan 430062, Peoples R China
关键词
Thin films; Sputtering; Electrical microscopy; Dielectric properties; BOTTOM ELECTRODES; ELECTRICAL-PROPERTIES;
D O I
10.1016/j.matchemphys.2009.12.035
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ba0.65Sr0.35TiO3 (BST) thin films were deposited on Pt/Ti/SiO2/Si, RuO2/SiO2/Si and RuO2/Pt/Ti/SiO2/Si substrates by radio frequency magnetron sputtering technique. The effects of these bottom electrodes on the microstructure and dielectric properties of the BST thin films were investigated by using X-ray diffraction (XRD), atomic force microscope (AFM), transmission electron microscopy (TEM) and electrical measurements. The BST thin films on RuO2/Pt hybrid bottom electrodes exhibit good crystalline and interfacial structure with a thinner transition layer. Dielectric measurement reveals that the films on RuO2/Pt hybrid electrodes have comparable dielectric constant and loss tangent with the films on Pt electrode, and the dielectric tunability of BST films on RuO2/Pt reaches 38.2%, which is higher than that of BST films on a single Pt or RuO2 electrode. The BST thin films on RuO2/Pt exhibit lower leakage current density by nearly two orders' of magnitude than that on RuO2 electrode. The higher tunability and lower leakage current of the films on RuO2/Pt hybrid bottom electrodes are mainly attributed to the RuO2 layer, which facilitates the nucleation and growth of BST films, and inhibits the interfacial diffusion between the BST films and bottom electrodes. The results show a potential for RuO2/Pt hybrid electrodes replacing Pt electrode in microelectronic device applications. (C) 2010 Published by Elsevier B.V.
引用
收藏
页码:28 / 31
页数:4
相关论文
共 50 条
  • [31] Dielectric response of (Ba,Sr)TiO3 thin films in a terahertz and IR ranges
    Komandin, G. A.
    Mukhortov, V. M.
    Porodinkov, O. E.
    Spektor, I. E.
    PHYSICS OF THE SOLID STATE, 2013, 55 (02) : 288 - 292
  • [32] Dielectric behavior of CVD (Ba,Sr)TiO3 thin films on Pt/Si
    Streiffer, SK
    Basceri, C
    Kingon, AI
    Lipa, S
    Bilodeau, S
    Carl, R
    VanBuskirk, PC
    METAL-ORGANIC CHEMICAL VAPOR DEPOSITION OF ELECTRONIC CERAMICS II, 1996, 415 : 219 - 224
  • [33] Dielectric relaxation and charge transport mechanisms in (Ba,Sr)TiO3 thin films
    Steinlesberger, G
    Reisinger, H
    Bachhofer, H
    Schroeder, H
    Werner, WSM
    INTEGRATED FERROELECTRICS, 2001, 38 (1-4) : 893 - 902
  • [34] Dielectric response in pulsed laser ablated (Ba,Sr)TiO3 thin films
    Saha, S
    Krupanidhi, SB
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (02) : 849 - 854
  • [35] Dielectric response of (Ba,Sr)TiO3 thin films in a terahertz and IR ranges
    G. A. Komandin
    V. M. Mukhortov
    O. E. Porodinkov
    I. E. Spektor
    Physics of the Solid State, 2013, 55 : 288 - 292
  • [36] Effect of (Ba plus Sr/Ti) ratio on the dielectric properties for highly (111) oriented (Ba,Sr)TiO3 thin films
    Wang, Yi
    Liu, Baoting
    Wei, Feng
    Yang, Zhimin
    Dua, Jun
    JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 475 (1-2) : 827 - 831
  • [37] Epitaxial growth of (Ba, Sr)TiO3 thin films and their ferroelectric properties
    Abe, K
    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2001, 109 (04) : S58 - S64
  • [38] Leakage current properties of (Ba,Sr)TiO3 films on doped (Ba,Sr)RuO3 electrodes
    Kim, BS
    Oh, SH
    Son, SY
    Park, KW
    Choi, DK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 41 (02) : 227 - 231
  • [39] LaNiO3 as contact material for (Ba,Sr)TiO3 dielectric thin films
    Srivastava, A
    Kumar, D
    Singh, RK
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 1999, 2 (06) : 294 - 296
  • [40] Thickness-dependent dielectric constants of (Ba,Sr)TiO3 thin films with Pt or conducting oxide electrodes
    Hwang, CS
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) : 432 - 437