Spin Interference In Silicon One-Dimensional Rings

We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. Firstly, the amplitude and phase sensitivity of the "0.7.(2e(2)/h)" feature of the hole quantum conductance staircase revealed by the quantum point contact inserted in the one of the arms of the double-slit ring are found to result from the Aharonov-Bohm (AB) and Aharonov-Casher (AC) conductance oscillations by varying respectively the value of the external magnetic field and the top-gate bias voltage. Secondly, the "0.7.(2e(2)/h)" feature appears to exhibit the fractional form revealed by both the plateuas and steps as a function of the top-gate bias voltage, with the variations of their positions in the external magnetic field.