Effect of Partial Substitution of Aluminium for Gallium on the Properties of Gadolinium Aluminum Gallium Garnet Single Crystals

被引：3

作者：

Kasimova, V. M. ^{[1
]}

Kozlova, N. S. ^{[1
]}

Buzanov, O. A. ^{[2
]}

Zabelina, E., V ^{[1
]}

Targonskii, A., V ^{[3
,4
]}

Rogachev, A., V ^{[3
]}

机构：

[1] Natl Univ Sci & Technol MISIS, Moscow 119049, Russia

[2] Fomos Mat, Moscow 107023, Russia

[3] Kurchatov Inst, Natl Res Ctr, Moscow 123182, Russia

[4] Russian Acad Sci, Crystallog & Photon Fed Res Ctr, Shubnikov Inst Crystallog, Moscow 119333, Russia

来源：

INORGANIC MATERIALS | 2022年 / 58卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

scintillator; oxidation state of cerium; synchrotron radiation; attenuation coefficient; optical band gap; Vickers microhardness; LUMINESCENCE; IRRADIATION; FILMS; CE3+;

D O I：

10.1134/S0020168522030062

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the optical properties and microhardness of gadolinium aluminum gallium garnet crystals with partial substitution of aluminium for gallium, Gd3Al2Ga3O12 (Al : Ga = 2 : 3) and Gd3Al3Ga2O12 (Al : Ga = 3 : 2), and also Gd3Al2Ga3O12:Ce (Al : Ga = 2 : 3) cerium-doped crystals. The Al : Ga ratio and doping with Ce have been shown to influence the light attenuation coefficient and optical band gap of the crystals. Using XANES spectroscopy data, we have evaluated the oxidation state of the cerium in the Gd3Al2Ga3O12:Ce3+ crystal.

引用

页码：288 / 294

页数：7

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