Some aspects of the photoluminescence and Raman spectroscopy of (10(1)over-bar-0)- and (11(2)over-bar-0)-oriented 4H and 6H silicon carbide

被引：2

作者：

Ivanov, IG ^{[1
]}

Henry, A

Hallin, C

Egilsson, T

Janzen, E

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] ABB Corp Res, S-72178 Vasteras, Sweden

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

photoluminescence; Raman scattering; a-axis;

D O I：

10.4028/www.scientific.net/MSF.264-268.469

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents the photoluminescence and Raman spectra of high-quality CVD-grown 4H- and 6H-SiC on a-axis substrate. For both on (<10(1)over bar 0>) and (<11(2)over bar 0>)-orientations high crystalline quality has been achieved, as indicated by the low-temperature photoluminescence (PL) spectra. Some experimental features arising from the anisotropy of the a-axis material in the plane of the epilayer are reviewed.

引用

页码：469 / 472

页数：4

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