Ultra-sensitive charge detection and latch memory using MoS2-nanoresonator-based bifurcation amplifiers

被引:17
|
作者
Dash, Aneesh [1 ]
More, Swapnil K. [1 ]
Arora, Nishta [1 ]
Naik, A. K. [1 ]
机构
[1] Indian Inst Sci, Ctr Nano Sci & Engn, Bangalore 560012, Karnataka, India
关键词
Sulfur compounds - Layered semiconductors - Bifurcation (mathematics);
D O I
10.1063/5.0031890
中图分类号
O59 [应用物理学];
学科分类号
摘要
Bifurcation amplifiers are known for their extremely high sensitivity to weak input signals. We implement a bifurcation amplifier by harnessing the Duffing nonlinearity in a parametrically excited MoS2 nano-electromechanical system. We utilize the ultra-sensitive switching response between the two states of the bifurcation amplifier to detect as well as register charge-fluctuation events. We demonstrate open-loop real-time detection of ultra-low electrical charge perturbations of magnitude<10 e at room temperature. Furthermore, we show latching of the resonator onto one of the two states in response to short-lived charge fluctuations. These charge detectors offer advantages of room-temperature operation and tunable operation in the radio frequency regime, which could open several possibilities in quantum sensing.
引用
收藏
页数:6
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