The APD annihilation mechanism of 3C-SiC hetero-epilayer on Si(001) substrate

被引：6
|
作者：
Ishida, Y
Takahashi, T
Okumura, H
Sekigawa, T
Yoshida, S
机构：
[1] Electrotech Lab, UPR Ultra Low Loss Power Device Technol Res Body, Tsukuba, Ibaraki 3058568, Japan
[2] Saitama Univ, Urawa, Saitama 3388570, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷
关键词：
3C-SiC; APCVD; APDs annihilation mechanism; growth mode; LPCVD; simulation;
D O I：
10.4028/www.scientific.net/MSF.338-342.253
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Heteroepitaxial layers of 3C-SiC on Si(001) without antiphase domains (APDs), which can hardly be obtained by atmospheric pressure chemical Vapor deposition (APCVD), can be obtained by low-pressure chemical vapor deposition method (LPCVD) despite using on-axis Si(001) substrate. LPCVD is different from APCVD in the growth mode, i.e., three dimensional (3D) island growth in APCVD and step-flow growth in LPCVD. This difference is attributed to the difference of the main Si species to carry Si atoms onto the grown surface. Based on these results, we propose a new APD annihilation model taking account of the difference in the main Si species and the confirmation of this model is demonstrated by the cellar automata (CA) simulation.
引用
收藏
页码：253 / 256
页数：4
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