Room-temperature InAs/AlSb quantum-cascade laser operating at 8.9μm

被引：5
|
作者：
Ohtani, K.
Fujita, K.
Ohno, H.
机构：
[1] Tohoku Univ, Res Inst Elect Commun, Lab Nanoelect & Semicond Spintron, Aoba Ku, Sendai, Miyagi 980, Japan
[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Japan
来源：
ELECTRONICS LETTERS | 2007年 / 43卷 / 09期
关键词：
D O I：
10.1049/el:20070251
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A room-temperature InAs/AlSb quantum-cascade laser operating at 8.9 mu m is reported. The laser structure is grown on an n-InAs (100) substrate by solid-source molecular-beam epitaxy. The active region utilises a diagonal intersubband transition in an InAs/AlSb three-quantum-well structure. Observed threshold current density in pulse mode is 2.6 kA/cm(2) at 80 K and 12.0 kA/cm(2) at 300 K. The maximum operation temperature is 305 K.
引用
收藏
页码：520 / 522
页数：3
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