InAs/AlSb quantum cascade lasers operating at 6.7 μm

被引：19
|
作者：
Teissier, R [1 ]
Barate, D
Vicet, A
Yarekha, DA
Alibert, C
Baranov, AN
Marcadet, X
Garcia, M
Sirtori, C
机构：
[1] Univ Montpellier 2, CEM2, F-34095 Montpellier, France
[2] THALES Res & Technol, F-91404 Orsay, France
[3] Univ Paris 07, Paris, France
来源：
ELECTRONICS LETTERS | 2003年 / 39卷 / 17期
关键词：
D O I：
10.1049/el:20030780
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Quantum cascade lasers based on the InAs/AlSb material system have been realised. The optical confinement is obtained using a plasmon waveguide with n(+)-InAs cladding layers. In pulse mode the lasers emit close to 6.7 mum with a threshold current density of 5 kA/cm(2) at 90K. The maximum operating temperature is 220K.
引用
收藏
页码：1252 / 1254
页数：3
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