Growth and Properties of Core-Shell GaP/ZnO Nanowires

被引：0
|
作者：
Novak, J. [1 ]
Elias, P. [1 ]
Hasenoehrl, S. [1 ]
Vavra, I. [1 ]
Krizanova, Z. [1 ]
Novotny, I. [2 ]
Kovac, J. [2 ]
机构：
[1] SAS, Inst Elect Engn, Bratislava 84104, Slovakia
[2] Slovak Tech Univ, Dept Microelect, Bratislava 81219, Slovakia
来源：
7TH INTERNATIONAL CONFERENCE ON LOW DIMENSIONAL STRUCTURES AND DEVICES (LDSD 2011) | 2014年 / 1598卷
关键词：
Nanowire; GaP/ZnO; photovoltaic;
D O I：
10.1063/1.4878290
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper reports on core-shell GaP/ZnO nanowires (NWs) with a vertically aligned PN heterojunction. The NWs were grown on p-type GaP (111)B substrate by a VLS technique using metal organic vapour phase epitaxy. The VLS growth was seeded by 30 nm Au nanoparticles deposited from a colloid on the substrate.
引用
收藏
页码：118 / 121
页数：4
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