Synthesis and electronic properties of ZnO/CoZnO core-shell nanowires

被引：26
|
作者：
Han, S [1 ]
Zhang, DH [1 ]
Zhou, CW [1 ]
机构：
[1] Univ So Calif, Dept EE Electrophys, Los Angeles, CA 90089 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 13期
关键词：
D O I：
10.1063/1.2187435
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
ZnO/CoZnO core-shell nanowires have been synthesized by depositing an epitaxial layer of CoxZn1-xO (x=0.05-0.25) onto single-crystalline ZnO nanowires via pulsed-laser deposition. Detailed material analysis confirmed the core-shell structure and revealed a homogeneous distribution of Co atoms in the ZnO lattice. Field-effect transistors have been fabricated based on individual ZnO/CoZnO nanowires. These devices exhibited n-type transistor characteristics and intriguing magnetoresistance below 30 K.
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页数：3
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