Effect of indium content in the channel on the electrical performance of metamorphic high electron mobility transistors

被引：0

作者：

Idham, Norman Fadhil M. ^{[1
]}

Ismat, Ahmad A. I. ^{[1
]}

Rasidah, S. ^{[1
]}

Asban, D. ^{[1
]}

Mohamed Razman, Y. ^{[1
]}

Abdul Fatah, A. M. ^{[1
]}

机构：

[1] Univ Putra Malaysia, MTDC,Idea Tower, Telekom Res & Dev Sdn Bhd, Technol Incubat Ctr 1, Serdang 43400, Selangor, Malaysia

来源：

2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metamorphic InAIAs/InGaAs High Electron Mobility Transistors (HEMT) has demonstrated several advantages over Pseudomorphic-HEMT on GaAs and Lattice Matched-HEMT on InP substrate. The high Indium content of the channel (50%) lattice matched to the substrate is the key factor behind the superior Metamorphic HEMT performance. Metamorphic HEMT allows a flexible range of InGaAs channel compositions from 30% to 80% (based on the applications) [1] on a compositionally graded buffer. Commercially available TCAD is used to simulate the Metamorphic HEMT to study the effect of varying Indium % in the channel layer on the electrical characteristics of the device.

引用

页码：743 / +

页数：3

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