High-reliability and low-dark-current 10-Gb/s planar superlattice avalanche photodiodes

被引:13
|
作者
Watanabe, I
Nakata, T
Tsuji, M
Makita, K
Taguchi, K
机构
[1] Opto-electronics Res. Laboratories, NEC Corporation, Tsukuba
关键词
avalanche photodiode; dark current; guard-ring; optical receiver; planar-structure; reliability; superlattice; 10; Gb/s;
D O I
10.1109/68.643288
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For compact and high-sensitivity 10 Gb/s optical receiver applications, we have developed low-dark-current planar-structure InAlGaAs-InAlAs superlattice avalanche photodiodes with a Ti-implanted guard-ring, The APD's exhibited dark current as low as 0.36 mu A at a gain of 10, The temperature dependence of the dark current was confirmed to be in a sufficient level for practical 10-Gb/s applications, The APD's also exhibited a quantum efficiency of 67%, a gain-bandwidth-product of 110 GHz, a top 3-dB bandwidth of 15.2 GHz, and a minimum gain for 10-GHz bandwidth of 1.6, Preliminary aging test also showed a stable dark current operation after aging of over 2200 h at 200 degrees C, These high-reliability, low-dark-current, high-speed, and wide-dynamic-range characteristics are promising for 10-Gb/s high-sensitivity optical receiver use.
引用
收藏
页码:1619 / 1621
页数:3
相关论文
共 46 条
  • [41] Low-Power-Consumption High-Eye-Margin 10-Gb/s Operation by GaInAsP/InP Distributed Reflector Lasers With Wirelike Active Regions
    Lee, SeungHun
    Takahashi, Daisuke
    Shindo, Takahiko
    Shinno, Keisuke
    Amemiya, Tomohiro
    Nishiyama, Nobuhiko
    Arai, Shigehisa
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (18) : 1349 - 1351
  • [42] High-Gain and Low-Dark Current GaN p-i-n Ultraviolet Avalanche Photodiodes Grown by MOCVD Fabricated Using Ion-Implantation Isolation
    Marzieh Bakhtiary-Noodeh
    Minkyu Cho
    Hoon Jeong
    Zhiyu Xu
    Chuan-Wei Tsou
    Can Cao
    Shyh-Chiang Shen
    Theeradetch Detchprohm
    Russell D. Dupuis
    Journal of Electronic Materials, 2021, 50 : 4462 - 4468
  • [43] High-Gain and Low-Dark Current GaN p-i-n Ultraviolet Avalanche Photodiodes Grown by MOCVD Fabricated Using Ion-Implantation Isolation
    Bakhtiary-Noodeh, Marzieh
    Cho, Minkyu
    Jeong, Hoon
    Xu, Zhiyu
    Tsou, Chuan-Wei
    Cao, Can
    Shen, Shyh-Chiang
    Detchprohm, Theeradetch
    Dupuis, Russell D.
    JOURNAL OF ELECTRONIC MATERIALS, 2021, 50 (08) : 4462 - 4468
  • [44] High sensitivity 10Gb/s Si photonic receiver based on a low-voltage waveguide-coupled Ge avalanche photodetector
    Chen, H. T.
    Verbist, J.
    Verheyen, P.
    De Heyn, P.
    Lepage, G.
    De Coster, J.
    Absil, P.
    Yin, X.
    Bauwelinck, J.
    Van Campenhout, J.
    Roelkens, G.
    OPTICS EXPRESS, 2015, 23 (02): : 815 - 822
  • [45] Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge Fabry-Perot lasers, operating at 10-Gb/s, up to 110 °C, with constant current swing
    Paoletti, R
    Agresti, M
    Bertone, D
    Bianco, L
    Bruschi, C
    Buccieri, A
    Campi, R
    Dorigoni, C
    Gotta, P
    Liotti, M
    Magnetti, G
    Montangero, P
    Morello, G
    Rigo, C
    Riva, E
    Rossi, G
    Soderstrom, D
    Stano, A
    Valenti, P
    Vallone, M
    Meliga, M
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2006, 24 (01) : 143 - 149
  • [46] 10-Gb/s transmission using 1.3-mu m low-chirp high-power directly modulated, packaged DFB laser module for short distance (<50 km) applications
    Kim, I
    Miller, TJ
    Park, YK
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (08) : 1167 - 1169