Silicon-based Ge and GeSn Photodetectors

被引：0
|
作者：
Xue, Chunlai [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing, Peoples R China
来源：
2016 PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM (PIERS) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：3158 / 3158
页数：1
相关论文
共 50 条
  • [31] Influence of two-tier structuring on the performance of black silicon-based MSM photodetectors
    Chao Wang
    Jing Jiang
    Chengui Zhang
    Yadong Jiang
    Shibin Li
    Zhiming Wu
    Journal of Materials Science: Materials in Electronics, 2014, 25 : 1542 - 1546
  • [32] Poly-Ge near-infrared photodetectors for silicon based optoelectronics
    Masini, G
    Colace, L
    Assanto, G
    ICTON 2003: 5TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 2, PROCEEDINGS, 2003, : 207 - 210
  • [33] GeSn/Ge quantum well photodetectors for short-wave infrared photodetection: Experiments and modeling
    Tsai, Chia-Ho
    Chang, Guo-En
    OPTICAL SENSORS 2017, 2017, 10231
  • [34] A Simulation-Based Study of Back-Illuminated Lateral Ge/GeSn/Ge Photodetectors on Si Platform for Mid-Infrared Image Sensing
    Kumar, Harshvardhan
    Pandey, Ankit Kumar
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (04) : 1721 - 1727
  • [35] VISIBLE PHOTOLUMINESCENCE OF SILICON-BASED NANOSTRUCTURES - POROUS SILICON AND SMALL SILICON-BASED CLUSTERS
    KANEMITSU, Y
    SUZUKI, K
    UTO, H
    MASUMOTO, Y
    MATSUMOTO, T
    KYUSHIN, S
    HIGUCHI, K
    MATSUMOTO, H
    APPLIED PHYSICS LETTERS, 1992, 61 (20) : 2446 - 2448
  • [36] Silicon-based high-responsivity GeSn short-wave infrared heterojunction phototransistors with a floating base
    Hung, Wei-Ting
    Barshilia, Devesh
    Basu, Rikmantra
    Cheng, H. H.
    Chang, Guo-En
    OPTICS LETTERS, 2020, 45 (05) : 1088 - 1091
  • [37] Flexible Amorphous GeSn MSM Photodetectors
    Yasar, Firat
    Fan, Wenjuan
    Ma, Zhenqiang
    IEEE PHOTONICS JOURNAL, 2018, 10 (02):
  • [38] High-quality silicon-based perovskite photodetectors with the detectivity exceeding 7.5 × 1013 Jones
    Liu, Ciyu
    Wu, Wenyi
    Liang, Junxian
    Zhou, Hai
    Optics Express, 2024, 32 (24) : 42793 - 42800
  • [39] Silicon-Based Optoelectronics
    Salvatore Coffa
    Leonid Tsybeskov
    MRS Bulletin, 1998, 23 : 16 - 19
  • [40] Silicon-based optoelectronics
    Malinverni, P
    SILICON-BASED MICROPHOTONICS: FROM BASICS TO APPLICATIONS, 1999, 141 : 427 - 436
12345