First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate

被引：12
|
作者：
Zubair, A. [1 ]
Perozek, J. [1 ]
Niroula, J. [1 ]
Aktas, O. [2 ]
Odnoblyudov, V [2 ]
Palacios, T. [1 ]
机构：
[1] MIT, 77 Massachusetts Ave, Cambridge, MA 02139 USA
[2] Qromis Inc, Santa Clara, CA 95051 USA
来源：
2020 DEVICE RESEARCH CONFERENCE (DRC) | 2020年
关键词：
D O I：
10.1109/drc50226.2020.9135176
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：2
相关论文
共 50 条
  • [31] Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
    Gribisch, Philipp
    Carrascon, Rosalia Delgado
    Darakchieva, Vanya
    Lind, Erik
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (08) : 4101 - 4107
  • [32] Demonstration of recycling process for GaN substrates using laser slicing technique towards cost reduction of GaN vertical power MOSFETs
    Ishida, Takashi
    Ushijima, Takashi
    Nakabayashi, Shosuke
    Kato, Kozo
    Koyama, Takayuki
    Nagasato, Yoshitaka
    Ohara, Junji
    Hoshi, Shinichi
    Nagaya, Masatake
    Hara, Kazukuni
    Kanemura, Takashi
    Taki, Masato
    Yui, Toshiki
    Hara, Keisuke
    Kawaguchi, Daisuke
    Kuno, Koji
    Osajima, Tetsuya
    Kojima, Jun
    Uesugi, Tsutomu
    Tanaka, Atsushi
    Sasaoka, Chiaki
    Onda, Shoichi
    Suda, Jun
    APPLIED PHYSICS EXPRESS, 2024, 17 (02)
  • [33] GaN-on-Si Lateral Power Devices with Symmetric Vertical Leakage: The Impact of Floating Substrate
    Zhang, Hanyuan
    Yang, Shu
    Sheng, Kuang
    PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2018, : 100 - 103
  • [34] Vertical GaN MOSFET Power Devices
    Langpoklakpam, Catherine
    Liu, An-Chen
    Hsiao, Yi-Kai
    Lin, Chun-Hsiung
    Kuo, Hao-Chung
    MICROMACHINES, 2023, 14 (10)
  • [35] Vertical Power Diodes in Bulk GaN
    Disney, Don
    Nie, Hui
    Edwards, Andrew
    Bour, David
    Shah, Hemal
    Kizilyalli, Isik C.
    2013 25TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2013, : 59 - 62
  • [36] First Demonstration of State-of-the-art GaN HEMTs for Power and RF Applications on A Unified Platform with Free-standing GaN Substrate and Fe/C Co-doped Buffer
    Wu, Mei
    Zhang, Meng
    Yang, Ling
    Hou, Bin
    Yu, Qian
    Li, Shiming
    Shi, Chunzhou
    Zhao, Wei
    Lu, Hao
    Chen, Weiwei
    Zhu, Qing
    Ma, Xiaohua
    Hao, Yue
    2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM, 2022,
  • [37] Multiphysics simulation study of thermal stress effects in nanoscale FinFETs heterogeneously integrated with GaN high-power device on silicon substrate
    Duan, Huali
    Li, Erping
    Huang, Qinyi
    Xu, Yuehang
    Chen, Wenchao
    MICROELECTRONICS JOURNAL, 2024, 150
  • [38] Demonstration of fully vertical GaN-on-Si Schottky diode
    Zhang, K.
    Mase, S.
    Nakamura, K.
    Hamada, T.
    Egawa, T.
    ELECTRONICS LETTERS, 2017, 53 (24) : 1610 - 1611
  • [39] Electrical properties of vertical GaN Schottky diodes on Ammono-GaN substrate
    Kruszewski, P.
    Prystawko, P.
    Grabowski, M.
    Sochacki, T.
    Sidor, A.
    Bockowski, M.
    Jasinski, J.
    Lukasiak, L.
    Kisiel, R.
    Leszczynski, M.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 96 : 132 - 136
  • [40] Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance
    Gallagher, James C.
    Anderson, Travis J.
    Koehler, Andrew D.
    Ebrish, Mona A.
    Foster, Geoffrey M.
    Mastro, Michael A.
    Hite, Jennifer K.
    Gunning, Brendan P.
    Kaplar, Robert J.
    Hobart, Karl D.
    Kub, Francis J.
    JOURNAL OF ELECTRONIC MATERIALS, 2021, 50 (06) : 3013 - 3021
12345