Analysis of substrate effect in chemically amplified resist on silicate-glass

被引:5
|
作者
Mori, S [1 ]
Fukushima, T [1 ]
Sato, Y [1 ]
机构
[1] SHARP CO LTD,CENT RES LABS,TENRI,NARA 632,JAPAN
关键词
substrate effect; chemically amplified resist; BPSG substrate; electron spectroscopy for chemical analysis; cleaning with H2SO4/H2O2;
D O I
10.1143/JJAP.35.6495
中图分类号
O59 [应用物理学];
学科分类号
摘要
The substrate effect of chemically amplified (CA) resists on boron-phosphorous-silicate-glass (BPSG), boron-silicate-glass (BSG), phosphorous-silicate-glass (PSG) and non-doped-silicate-glass (NSG) has been investigated using a surface analysis technique. The resist pattern of a negative-tone CA resist on BPSG, PSG and BSG substrates has an undercut profile, and that of a positive-tone CA resist on these substrates has a footing profile. To clarify the interaction between CA resists and BPSG, BSG, PSG and NSG substrates, the surface of these substrates was analyzed by electron spectroscopy for chemical analysis (ESCA). It was found that there are boron oxides and/or phosphorous oxides on the surface. These oxides are considered to contribute to the undercut profile of the negative resist and footing profile of the positive resist, and to quench photo-generated acids in the resists. Further, cleaning of the surface of a BPSG substrate with H2SO4/H2O2 is results in improvement of the pattern profile.
引用
收藏
页码:6495 / 6500
页数:6
相关论文
共 50 条
  • [31] Elimination of 'bottom pinching' effect in environmentally stable chemically amplified resist
    Soo, CP
    Fan, MH
    Bourdillon, AJ
    Chan, L
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XII, 1998, 3332 : 727 - 734
  • [32] CHEMICALLY AMPLIFIED RESIST USING SELF-SOLUBILITY ACCELERATION EFFECT
    KIHARA, N
    USHIROGOUCHI, T
    TADA, T
    NAITO, T
    SAITO, S
    NAKASE, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (11) : 3162 - 3166
  • [33] Post exposure bake effect in 193 nm chemically amplified resist
    Oh, HK
    Sohn, YS
    Sung, MG
    Lee, YM
    Lee, EM
    An, I
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S734 - S737
  • [34] Effect of fluorine atom on acid generation in chemically amplified EUV resist
    Yamamoto, Hiroki
    Kozawa, Takahiro
    Tagawa, Seiichi
    Yukawa, Hiroto
    Sato, Mitsuru
    Onodera, Junichi
    MICROPROCESSES AND NANOTECHNOLOGY 2007, DIGEST OF PAPERS, 2007, : 76 - +
  • [35] Dissolution Kinetics in Chemically Amplified EUV Resist
    Yamamoto, Hiroki
    Kozawa, Takahiro
    Tagawa, Seiichi
    Mimura, Takeyoshi
    Iwai, Takeshi
    Onodera, Junichi
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2011, 24 (04) : 405 - 410
  • [36] Photomask defect tracing, analysis and reduction with chemically amplified resist process
    Lin, CM
    Lai, R
    Huang, WH
    Wang, BC
    Chen, CY
    Kung, CH
    Yoo, CS
    Chen, JJ
    Lee, SC
    PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY X, 2003, 5130 : 205 - 212
  • [37] MODELING AND SIMULATION OF CHEMICALLY AMPLIFIED RESIST SYSTEMS
    HONGU, A
    ASAKAWA, K
    USHIROGOUCHI, T
    WAKABAYASHI, H
    SAITO, S
    NAKASE, M
    POLYMERIC MATERIALS FOR MICROELECTRONIC APPLICATIONS: SCIENCE AND TECHNOLOGY, 1994, 579 : 176 - 184
  • [38] New polysiloxanes for chemically amplified resist applications
    Puyenbroek, R.
    van de Grampel, J.C.
    Meetsma, A.
    van der Drift, E.W.J.M.
    Rousseeuw, B.A.C.
    Polymeric Materials Science and Engineering, Proceedings of the ACS Division of Polymeric Materials Science and Engineering, 1600, 72
  • [39] Thermal effects study of chemically amplified resist
    Kim, Sang-Kon
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2, 2006, 6153 : U1418 - U1424
  • [40] Theory of Photodecomposable Base in Chemically Amplified Resist
    Neisser, Mark
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2023, 36 (05) : 329 - 336