Theory of bond-length variations in relaxed, strained, and amorphous silicon-germanium alloys

被引:22
|
作者
Tzoumanekas, C
Kelires, PC
机构
[1] Univ Crete, Dept Phys, Iraklion 71003, Crete, Greece
[2] Fdn Res & Technol Hellas, Iraklion 71110, Crete, Greece
来源
PHYSICAL REVIEW B | 2002年 / 66卷 / 19期
关键词
D O I
10.1103/PhysRevB.66.195209
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a theoretical study of bond-length and angle variations in relaxed, epitaxially strained, and amorphous Si1-xGex alloys. Our approach is based on Monte Carlo simulations, within the semigrand-canonical ensemble utilizing Ising-like identity flips, and in conjuction with energies calculated using the empirical potential of Tersoff [Phys. Rev. B 39, 5566 (1989)]. The method offers great statistical precision enabling us to extract clear variations through the whole composition range and for all types of bonds. Our simulations show that in relaxed crystalline alloys, where the lattice constant takes its natural value, bond lengths depend on composition x and that these variations are type specific, in agreement with recent experimental studies. Similar type-specific variations are found for the angles and the second-nearest-neighbor distances. This analysis also reveals that the negative deviation of the lattice constant from Vegard's law is mainly due to radial, and not angular, relaxations. In the epitaxially strained alloys, bond lengths decrease with x due to the two-dimensional confinement in the growth layers, in good agreement with predictions based on the macroscopic theory of elasticity. The dimer bond lengths at the (100)-(2x1)-reconstructed alloy surface remain nearly constant, and they are elongated with respect to the bulk values. In the amorphous alloys, we unravel a remarkable behavior of bond lengths at the dilute low-x alloy limit, characterized by strong relaxations and elongation. Furthermore, the bond lengths decrease with increasing Ge content. We offer an explanation of this effect based on the analysis of the enthalpy of formation of the amorphous alloy.
引用
收藏
页码:1 / 11
页数:11
相关论文
共 50 条
  • [42] SCHOTTKY-BARRIER JUNCTIONS OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS
    MATSUURA, H
    OKUSHI, H
    TANAKA, K
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 963 - 966
  • [43] Microstructural analysis of nanostructured amorphous silicon-germanium alloys: Numerical modeling
    Ben Brahim, R.
    Chehaidar, A.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2011, 357 (14) : 2620 - 2625
  • [44] REACTION OF TITANIUM WITH GERMANIUM AND SILICON-GERMANIUM ALLOYS
    THOMAS, O
    DELAGE, S
    DHEURLE, FM
    SCILLA, G
    APPLIED PHYSICS LETTERS, 1989, 54 (03) : 228 - 230
  • [45] THERMAL RELAXATION OF THE ELECTRIC-CONDUCTIVITY IN AMORPHOUS SILICON-GERMANIUM ALLOYS
    LIU, JZ
    CHU, V
    SHEN, DS
    SLOBODIN, D
    WAGNER, S
    PHYSICAL REVIEW B, 1989, 40 (09): : 6424 - 6427
  • [46] STRUCTURAL, OPTICAL, AND SPIN PROPERTIES OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS
    STUTZMANN, M
    STREET, RA
    TSAI, CC
    BOYCE, JB
    READY, SE
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) : 569 - 592
  • [47] Electronic structure and light induced degradation of amorphous silicon-germanium alloys
    Zhong, F
    Chen, CC
    Cohen, JD
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 200 : 572 - 576
  • [48] Electronic structure and light induced degradation of amorphous silicon-germanium alloys
    Zhong, Fan
    Chen, Chih-Chiang
    Cohen, J.David
    Journal of Non-Crystalline Solids, 1996, 198-200 (pt 1): : 572 - 576
  • [49] DEFECTS IN HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS STUDIED BY PHOTOMODULATION SPECTROSCOPY
    CHEN, LG
    TAUC, J
    LEE, JK
    SCHIFF, EA
    PHYSICAL REVIEW B, 1991, 43 (14): : 11694 - 11702
  • [50] THERMAL EQUILIBRATION OF DEFECT DENSITY IN HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS
    YAN, H
    MORIMOTO, A
    KUMEDA, M
    SHIMIZU, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (7B): : L1235 - L1237