Optical investigation of thick 3C-SiC layers deposited on bulk silicon by CVD

被引：4
|
作者：
Bluet, JM
Camassel, J
Falkovsky, LA
Leycuras, A
机构：
[1] RUSSIAN ACAD SCI,LD LANDAU THEORET PHYS INST,MOSCOW 117334,RUSSIA
[2] CNRS,CTR RECH HETEROEPITAXIE & SES APPLICAT,F-06560 VALBONNE,FRANCE
来源：
DIAMOND AND RELATED MATERIALS | 1997年 / 6卷 / 10期
关键词：
3C-SiC heteroepitaxy; roughness; epitaxial layer uniformity; strain relaxation;
D O I：
10.1016/S0925-9635(97)00101-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thick (up to 25 mu m) SiC layers deposited on silicon have been probed by micro-Raman spectroscopy and infrared reflectivity measurement. The Raman spectra collected on the edge of the sample show a large strain relaxation when moving from the interface region to the free surface of the sample. The IR reflectivity measurements evidence a finite roughness of the Si/SiC interface and about 10% dispersion in the layer thickness homogeneity. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：1385 / 1387
页数：3
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