A 0.52 ppm/A°C high-order temperature-compensated voltage reference

被引：2
|
作者：
Liu, Yonggen [1 ]
Li, Zhaoji [1 ]
Luo, Ping [1 ]
Zhang, Bo [1 ]
机构：
[1] Univ Elect Sci & Technol China, IC Design Ctr, Chengdu 610054, Peoples R China
来源：
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2010年 / 62卷 / 01期
关键词：
Curvature compensation; Bandgap voltage reference; Current gain; Emitter bandgap narrowing factor;
D O I：
10.1007/s10470-009-9317-7
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper proposed a new high-order curvature compensation technique for a new bandgap voltage reference structure using the temperature characteristics of current gain beta and emitter bandgap narrowing factor Delta E (G) of a lateral NPN bipolar transistor. The new structure can produce two voltage references, which are 1.209 and 2.418 V, respectively. The simulation results show that the temperature coefficients of the two output voltage are 0.52 ppm/A degrees C, the PSRR is more than 60 dB for frequencies at 10 kHz, and the circuit dissipates 0.18 mW with 5-V supply.
引用
收藏
页码：17 / 21
页数：5
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