Advances on Doping Strategies for Triple-Gate FinFETs and Lateral Gate-All-Around Nanowire FETs and Their Impact on Device Performance (vol 62, pg 2, 2017)

被引：0
|
作者：
Veloso, A. [1 ]
De Keersgieter, A. [1 ]
Matagne, P. [1 ]
Horiguchi, N. [1 ]
Collaert, N. [1 ]
机构：
[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2017年 / 63卷
关键词：
D O I：
10.1016/j.mssp.2017.03.013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：303 / 303
页数：1
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