Effects of the Plasma Treatment on the Electrical Properties of Indium Tin Oxide Thin Films

被引：2
|
作者：
Lee, S. G. [2 ]
Park, J. Y. [1 ]
Lee, S. M. [1 ]
Sohn, S. H. [1 ]
机构：
[1] Kyungpook Natl Univ, Dept Phys, Taegu 702701, South Korea
[2] Korea Basic Sci Inst, Daegu Ctr, Taegu, South Korea
来源：
MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2009年 / 513卷
关键词：
conductivity; grain size; indium tin oxide; lattice strain; plasma treatment; surface morphology;
D O I：
10.1080/15421400903217009
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The sheet resistance of the ITO films after oxygen and nitrogen plasma treatments was investigated, based on the change in the lattice characteristics such as the grain size and the lattice strain. The plasma treatment yields an increase in the grain size thence the electrical conductivity in addition to better surface morphology. The decrease in lattice strain is attributable to the increase in the grain size. The experimental results imply that the grain boundary scattering limited mobility plays an important role in the conductivity of ITO films.
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页码：277 / 284
页数：8
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