Analysis of slot characteristics in slotted single-mode semiconductor lasers using the 2-D scattering matrix method

被引:76
|
作者
Lu, Q. Y. [1 ]
Guo, W. H.
Phelan, R.
Byrne, D.
Donegan, J. E.
Lambkin, P.
Corbett, B.
机构
[1] Univ Dublin Trinity Coll, Semicond Photon Grp, Sch Phys, Dublin 2, Ireland
[2] Univ Dublin Trinity Coll, Semicond Photon Grp, CTVR, Dublin 2, Ireland
[3] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst,CTVR, Cork, Ireland
[4] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst,Photon Grp, Cork, Ireland
基金
爱尔兰科学基金会;
关键词
perfectly matched absorption layers (PMLs); scattering matrix method; semiconductor lasers; single-mode laser; transfer matrix method;
D O I
10.1109/LPT.2006.887328
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We use the two-dimensional (2-D) scattering matrix method (SMM) to analyze the slot characteristics in slotted single-mode semiconductor lasers and compare the results with those calculated by the one-dimensional transfer matrix method (TMM). The analysis shows that the 2-D SMM is required to accurately account for the measured results. Using the 2-D SMM simulation, we find that there is almost no reflection at the interface from slot to waveguide while a large reflection exists at the interface from waveguide to slot, and the power loss is much larger than the power reflected. For a single slot, the slot width has little influence on the slot reflectivity, which coincides with the measured results. The reflection and transmission of the slot are found to be exponentially dependent on the slot depth.
引用
收藏
页码:2605 / 2607
页数:3
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