An Efficient and Robust Yield Optimization Method for High-dimensional SRAM Circuits

被引:0
|
作者
Wang, Xiaodong [1 ]
Gu, Tianchen [1 ]
Yan, Changhao [1 ]
Wu, Xiulong [2 ]
Yang, Fan [1 ]
Wang, Sheng-Guo [3 ]
Zhou, Dian [4 ]
Zeng, Xuan [1 ]
机构
[1] Fudan Univ, Microelect Dept, State Key Lab ASIC & Syst, Shanghai, Peoples R China
[2] Anhui Univ, Hefei, Peoples R China
[3] Univ North Carolina Charlotte, Charlotte, NC USA
[4] Univ Texas Dallas, Dallas, TX USA
基金
中国国家自然科学基金;
关键词
Yield Optimization; SRAM Circuits; Design Variations; Multi-Fidelity; Multi-Modal;
D O I
10.1109/dac18072.2020.9218611
中图分类号
TP31 [计算机软件];
学科分类号
081202 ; 0835 ;
摘要
Due to time-consuming SPICE simulations and extremely low failure rules, yield optimization for large static random access memory (SRAM) circuits is still a challenging problem. In this paper, a novel robust yield optimization problem is firstly proposed for SRAM circuits, where robust means considering design and process parameter variations simultaneously. Both a multi-fidelity Gaussian process regression model, which utilizes the strong nonlinear relationship between small and large SRAM columns, and a Bayesian optimization framework are applied to guide the sampling of the expensive large SRAM circuits. A multi-modal problem is formulated to find all peaks and valleys on the small SRAM circuits. Such precompulalional knowledge can accelerate the convergence of the proposed multi-fidelity and Bayesian optimization framework. Experimental results show that robust yield is essential to yield optimization, for traditional optimal design will degenerate with 4-5 orders of magnitude of yields, if design variations considered, and it doesn't coincide with the new optimum under the robust yield. The proposed method can gain a 3 similar to 4x speedup compared to the state-of-the-art method without loss of accuracy.
引用
收藏
页数:6
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