Island-size dependence of reconstructed structures on Si(111)

被引：6
|
作者：
Itoh, M
机构：
[1] Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College
来源：
PHYSICAL REVIEW B | 1997年 / 56卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.56.3583
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Island-size dependence of the reconstructed structures on a Si(111) surface is studied by using the recently proposed quasi-two-dimensional four-state planar model. Monte Carlo calculations show the existence of the minimum size of islands on which the reconstructed structures can appear. The relationship between the annealing length and the reconstructed cell's sizes is also discussed.
引用
收藏
页码：3583 / 3586
页数：4
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