ZnO/graphene ambipolar transistor with low sub-threshold swing

被引：3

作者：

Kim, Byeong-Hyeok ^{[1
]}

Hong, Sang-Hyun ^{[2
]}

Kang, Jang-Won ^{[3
]}

机构：

[1] Korea Atom Energy Res Inst, Adv Radiat Technol Inst, Jeongeup Si 56212, Jeollabuk Do, South Korea

[2] Gwangju Inst Sci & Technol, GIST Cent Res Facil, Gwangju 61005, South Korea

[3] Mokpo Natl Univ, Dept Phys, Muan 58554, Jeollanam Do, South Korea

来源：

MATERIALS RESEARCH EXPRESS | 2021年 / 8卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

Multi-layer graphene; ZnO; Thin-film transistor; Hybrid structure; Sub-threshold swing;

D O I：

10.1088/2053-1591/abe8e7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We reported on enhanced device performance of ambipolar thin-film transistors (TFTs) with hybrid channel of Zinc oxide (ZnO) and multi-layer graphene (MLG), especially in reduced sub-threshold swing characteristics and increased carrier mobilities for the ambipolar conduction. The Raman spectroscopy and x-ray photoelectron spectroscopy (XPS) showed that the single-layer graphene could be damaged by oxidation during the ZnO growth process. In MLG, we observed that the graphene layers distant from the interface of ZnO/graphene could be protected, leading to enhanced electrical properties in ZnO/graphene hybrid TFTs. These results showed that the ZnO/MLG hybrid structure is a suitable building block to realize advanced TFTs with low power consumption and high switching speed.

引用

页数：6

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