Effect of sidewall passivation in BCl3/N2 inductively coupled plasma etching of two-dimensional GaAs photonic crystals

被引：21
|
作者：
Atlasov, Kirill A. [1 ]
Gallo, Pascal [1 ]
Rudra, Alok [1 ]
Dwir, Benjamin [1 ]
Kapon, Eli [1 ]
机构：
[1] Ecole Polytech Fed Lausanne, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 05期
关键词：
SEMICONDUCTORS;
D O I：
10.1116/1.3205004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of surface passivation in BCl(3)/N(2) inductively coupled plasma reactive-ion etching of GaAs-based photonic crystals (PhCs) was investigated. It is shown that sidewall passivation is crucial for achieving cylindrical, vertical PhC holes, where the exact shape of the hole is controlled via the N(2) content in the plasma composition. The achieved quality of PhC membrane cavities was established by optical characterization of such cavities incorporating site-controlled quantum wires as integrated light source. (C) 2009 American Vacuum Society. [DOI:10.1116/1.3205004]
引用
收藏
页码：L21 / L24
页数：4
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