Cl2/O2- and Cl2/N2-based inductively coupled plasma etching of photonic crystals in InP:: Sidewall passivation

被引：0

作者：

van der Heijden, R ^{[1
]}

Carlström, CF ^{[1
]}

van der Drift, E ^{[1
]}

van der Heijden, RW ^{[1
]}

Nötzel, R ^{[1
]}

van Veldhoven, R ^{[1
]}

Karouta, F ^{[1
]}

Salemink, HWM ^{[1
]}

Talneau, A ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Interuniv Res Inst, COBRA, NL-5600 MB Eindhoven, Netherlands

来源：

2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS | 2005年

关键词：

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have fabricated two-dimensional photonic crystals in InP-based materials with Cl-2-based inductively coupled plasma etching. To obtain vertical sidewalls, we employ sidewall passivation through addition of N-2 or O-2 to the plasma. With the Cl-2/O-2-process we are able to etch 3.2 mu m deep holes that have nearly cylindrical shape in the upper 2 mu m. The first optical results illustrate the feasibility of our approach, showing over 30 dB transmission reduction in the Gamma K-stopband.

引用

页码：315 / 318

页数：4

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