Numerical Investigation on the Carrier Transport Characteristics of AlGaN Deep-UV Light-Emitting Diodes

被引：82
|
作者：
Kuo, Yen-Kuang [1 ]
Chang, Jih-Yuan [2 ]
Chen, Fang-Ming [3 ]
Shih, Ya-Hsuan [4 ]
Chang, Hui-Tzu [1 ]
机构：
[1] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan
[2] Natl Changhua Univ Educ, Ctr Teacher Educ, Changhua 500, Taiwan
[3] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan
[4] Natl Cheng Kung Univ, Dept Photon, Tainan 701, Taiwan
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2016年 / 52卷 / 04期
关键词：
Light-emitting diodes; quantum wells; polarization; POLARIZATION; MODEL; ELECTROABSORPTION; FIELD;
D O I：
10.1109/JQE.2016.2535252
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (LEDs) are theoretically investigated. Simulation results reveal that hole transport/injection may be severely obstructed by the large potential barrier at the p-electron-blocking layer/p-GaN interface. Under this circumstance, the slope efficiency degrades and electron leakage increases accordingly. By inserting the AlGaN interlayers to form band-engineered staircase p-region, both the transport/injection of holes and I-V characteristic are improved. Moreover, the LED characteristics become less sensitive to the polarization field, which is beneficial for obtaining high LED performance with the LED of high crystalline quality.
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页数：5
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