Remarkable room-temperature magnetoresistance in silicon strip devices

被引：0
|
作者：
Guo, Hui [1 ,2 ]
Cui, Lei [1 ,2 ]
Li, Yali [1 ,2 ]
Chen, Qiang [3 ,4 ]
Fan, Xiaolong [1 ,2 ]
Wang, Fangcong [1 ,2 ]
Li, Junshuai [1 ,2 ]
机构：
[1] Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Key Lab Special Funct Mat & Struct Design, 222 South Tianshui Rd, Lanzhou 730000, Peoples R China
[2] Lanzhou Univ, Sch Phys Sci & Technol, 222 South Tianshui Rd, Lanzhou 730000, Peoples R China
[3] Xiamen Univ, Dept Elect Sci, Inst Electromagnet & Acoust, Xiamen 361005, Peoples R China
[4] Xiamen Univ, Fujian Prov Key Lab Plasma & Magnet Resonance, Xiamen 361005, Peoples R China
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2017年 / 11卷 / 01期
基金：
中国国家自然科学基金;
关键词：
silicon strip devices; room temperature magnetoresistance; carrier scattering; NONSATURATING MAGNETORESISTANCE; SPINTRONICS; FUTURE;
D O I：
10.1002/pssr.201600253
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we report remarkable roomtemperature magne-toresistance (MR) in silicon strip devices. Saturating and non-saturating MRs can be realized based on the measuring con-figurations with one top contact and ten top contacts, respec-tively. Using the onetopcontact measurement, a saturating MR ratio of similar to 400% is obtained at an applied voltage of only 1.0 V when the magnetic field is larger than 0.8 T. While the non-saturating MR is achieved in the ten-top-contact measurement and the MR ratio is only similar to 155% for the 1.0 V applied voltage even under the magnetic field of 1.2 T. The differences for MR ratio values and change trends in these two measuring configurations are attributed to the enhanced Hall electric field with the increase of the top contact number.
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收藏
页数：4
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