Remarkable room-temperature magnetoresistance in silicon strip devices

In this paper, we report remarkable roomtemperature magne-toresistance (MR) in silicon strip devices. Saturating and non-saturating MRs can be realized based on the measuring con-figurations with one top contact and ten top contacts, respec-tively. Using the onetopcontact measurement, a saturating MR ratio of similar to 400% is obtained at an applied voltage of only 1.0 V when the magnetic field is larger than 0.8 T. While the non-saturating MR is achieved in the ten-top-contact measurement and the MR ratio is only similar to 155% for the 1.0 V applied voltage even under the magnetic field of 1.2 T. The differences for MR ratio values and change trends in these two measuring configurations are attributed to the enhanced Hall electric field with the increase of the top contact number.