Persistent phosphors, also called glow-in-the-dark materials, are a specific class of luminescent materials having the unique ability to emit light long after the excitation ended. For many applications in the visible spectrum, such as in emergency signage or road marks, the storage capacity of the Eu2+ based phosphors should further be increased. In this work we show that the excitation of the europium center in Sr2MgSi2O7: Eu, Dy by near-UV light not only leads to charge trapping, but also to optically stim-ulated release of previously trapped charges and subsequent luminescence (OSL). The experimental evidence for OSL at the excitation wavelength is supported by a model assuming local trapping and an additional detrapping rate proportional to the excitation intensity. In this way, the characteristics of both the charging and afterglow behaviour can be explained. The storage capacity of a persistent phosphor is thus not only controlled by the trap density and the trap depth, but also by the sensitivity to optically stimulated detrapping at the excitation wavelength. (C) 2016 Optical Society of America
机构:
Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education,Northeast Normal UniversityKey Laboratory for UV-Emitting Materials and Technology of Ministry of Education,Northeast Normal University
Xiyu Zhao
Chenlin Li
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Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education,Northeast Normal UniversityKey Laboratory for UV-Emitting Materials and Technology of Ministry of Education,Northeast Normal University
Chenlin Li
Feng Liu
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Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education,Northeast Normal UniversityKey Laboratory for UV-Emitting Materials and Technology of Ministry of Education,Northeast Normal University
Feng Liu
Xiao-jun Wang
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Department of Physics,Georgia Southern UniversityKey Laboratory for UV-Emitting Materials and Technology of Ministry of Education,Northeast Normal University
机构:
Northeast Normal Univ, Minist Educ, Key Lab UV Emitting Mat & Technol, Changchun 130024, Peoples R ChinaNortheast Normal Univ, Minist Educ, Key Lab UV Emitting Mat & Technol, Changchun 130024, Peoples R China
Zhao, Xiyu
Li, Chenlin
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Northeast Normal Univ, Minist Educ, Key Lab UV Emitting Mat & Technol, Changchun 130024, Peoples R ChinaNortheast Normal Univ, Minist Educ, Key Lab UV Emitting Mat & Technol, Changchun 130024, Peoples R China
Li, Chenlin
Liu, Feng
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Northeast Normal Univ, Minist Educ, Key Lab UV Emitting Mat & Technol, Changchun 130024, Peoples R ChinaNortheast Normal Univ, Minist Educ, Key Lab UV Emitting Mat & Technol, Changchun 130024, Peoples R China
Liu, Feng
Wang, Xiao-jun
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Georgia Southern Univ, Dept Phys, Statesboro, GA 30460 USANortheast Normal Univ, Minist Educ, Key Lab UV Emitting Mat & Technol, Changchun 130024, Peoples R China